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3 changes found
Comparing:
Previous Version
SE03-047 — Rev 225
2026-03-15Ahmad87 pages
Current Version
SE03-047 — Rev 226
2026-04-01Ahmad89 pages
AI Change Analysis
1 High1 Medium1 Low

3 changes detected between Rev 225 and Rev 226. Key modification: exposure dose parameters updated for 130nm node to improve CD uniformity. New section added for EUV-compatible resist guidelines. One procedural change flagged as high-risk due to impact on downstream etch processes.

Side-by-Side Comparison
AddedRemovedModified
PreviousRev 225
1PHOTOLITHOGRAPHY PROCESS SPECIFICATION
2Document ID: SE03-047 | Revision: 225
3Department: Engineering | Classification: Controlled
4 
51. PURPOSE
6This specification defines the photolithography process parameters
7for 130nm and 180nm technology nodes at SilTerra Fab 1.
8 
92. SCOPE
10Applicable to all photolithography tools in Module 3 (Stepper Bay).
11 
124.2 EXPOSURE PARAMETERS — 130nm NODE
13 Exposure Dose: 28.5 mJ/cm²
14 Focus Offset: -0.05 μm
15 Numerical Aperture: 0.75
16 Sigma Inner/Outer: 0.60 / 0.85
17 
185.1 POST-EXPOSURE BAKE (PEB)
19 Temperature: 110°C ± 0.5°C
20 Bake Time: 60 seconds
21 Hotplate Uniformity: ± 0.3°C across wafer
22 
236. RESIST HANDLING AND STORAGE
246.1 Resist Coating Parameters
25 Spin Speed: 3500 RPM ± 50
26 Spin Time: 30 seconds
27 
287. QUALITY CONTROL
29 CD Measurement: 5-point sampling per wafer
30 Overlay Accuracy: ≤ 25nm (3σ)
CurrentRev 226
1PHOTOLITHOGRAPHY PROCESS SPECIFICATION
2Document ID: SE03-047 | Revision: 226
3Department: Engineering | Classification: Controlled
4 
51. PURPOSE
6This specification defines the photolithography process parameters
7for 130nm and 180nm technology nodes at SilTerra Fab 1.
8 
92. SCOPE
10Applicable to all photolithography tools in Module 3 (Stepper Bay).
11 
124.2 EXPOSURE PARAMETERS — 130nm NODE
13 Exposure Dose: 31.2 mJ/cm² ◄ UPDATED
14 Focus Offset: -0.08 μm ◄ UPDATED
15 Numerical Aperture: 0.75
16 Sigma Inner/Outer: 0.60 / 0.85
17 
18 ⚠ AI NOTE: Dose increase of 9.5% may affect downstream
19 etch selectivity. Verify with SE03-048 etch parameters.
20 
215.1 POST-EXPOSURE BAKE (PEB)
22 Temperature: 110°C ± 0.3°C ◄ TIGHTENED
23 Bake Time: 90 seconds ◄ EXTENDED
24 Hotplate Uniformity: ± 0.3°C across wafer
25 
266. RESIST HANDLING AND STORAGE
276.1 Resist Coating Parameters
28 Spin Speed: 3500 RPM ± 50
29 Spin Time: 30 seconds
30 
316.5 EUV-COMPATIBLE RESIST GUIDELINES (NEW)
32 Resist Type: Chemically Amplified (CAR)
33 Storage Temperature: 2-6°C (refrigerated)
34 Shelf Life: 6 months from manufacture date
35 Validation: Monthly viscosity check required
36 
377. QUALITY CONTROL
38 CD Measurement: 5-point sampling per wafer
39 Overlay Accuracy: ≤ 25nm (3σ)
Impact Analysis
4 documents affected(1 direct)
1 Direct2 Indirect1 Informational
SE03-048Direct ImpactEngineering
Etch Process Control Procedure

Exposure dose increase of 9.5% directly affects resist profile thickness, which changes etch selectivity ratios in oxide etch steps.

SE01-112Indirect ImpactEngineering
Wafer Acceptance Test Specification

Tightened PEB tolerance may require recalibration of metrology equipment calibration schedules.

SQ-001InformationalQuality
Quality Management System Manual

New EUV resist section introduces additional storage and handling requirements that should be referenced in QMS chemical management procedures.

EHS-003Indirect ImpactEHS
Chemical Handling and Storage Safety Procedure

EUV resist storage at 2-6°C requires dedicated refrigeration unit in chemical storage area. Update EHS chemical inventory.